gan on sic hemt pulsed power transistor 250w peak, 1200 - 1400 mhz, 300s pulse, 10% duty magx - 001214 - 250l00 production v1 18 aug 11 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additional data sheets and product information. m/a - com technology solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 1 advanced: data sheets contain information regarding a product m/a - com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a - com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. features ? gan depletion mode hemt microwave transistor ? internally matched ? common source configuration ? broadband class ab operation ? rohs compliant ? +50v typical operation ? mttf of 114 years (channel temperature < 200c) applications ? l - band pulsed radar product description the magx - 001214 - 250l00 is a gold metalized matched gallium nitride (gan) on silicon carbide rf power transistor optimized for pulsed l - band radar applications. using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for todays demanding application needs. high breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. ordering information magx - 001214 - 250l00 250w gan power transistor magx - 001214 - sb1ppr evaluation fixture typical rf performance at pout = 250w peak freq pin gain slope id eff avg - eff rl droop (mhz) (w) (db) (db) (a) (%) (%) (db) (db) 1200 4.4 17.6 - 8.0 62.2 - - 13.3 0.4 1250 4.0 18.0 - 8.2 60.4 - - 19.2 0.5 1300 4.1 17.8 - 8.7 57.1 - - 22.6 0.6 1350 4.4 17.5 - 9.1 54.6 - - 19.2 0.7 1400 4.4 17.6 0.5 9.0 55.0 57.9 - 19.8 0.6
gan on sic hemt pulsed power transistor 250w peak, 1200 - 1400 mhz, 300s pulse, 10% duty magx - 001214 - 250l00 production v1 18 aug 11 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additional data sheets and product information. m/a - com technology solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 2 advanced: data sheets contain information regarding a product m/a - com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a - com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. absolute maximum ratings table (1, 2, 3) supply voltage (v dd ) +65v supply voltage (v gs ) - 8 to - 2v supply current (i dmax ) 8.8 apk input power (p in ) +40 dbm absolute max. junction/channel temp 200 oc mttf (t j <200c) 114 years pulsed power dissipation at 85oc 192 wpk thermal resistance, (tj = 70 oc) v dd = 50v, i dq = 250ma, pout = 250w 300us pulse / 10% duty 0.60oc/w operating temp - 40 to +95oc storage temp - 65 to +150oc mounting temperature see solder reflow profile esd min. - machine model (mm) 50v esd min. - human body model (hbm) >250v msl level msl1 (1) operation of this device above any one of these parameters may cause permanent damage. (2) channel temperature directly affects a device's mttf. channel temperature should be kept as low as possible to maximize lifetime. (3) for saturated performance it recommended that the sum of (3*vdd + abs(vgg)) <175 parameter test conditions symbol min typ max units dc characteristics drain - source leakage current v gs = - 8v, v ds = 175v i ds - 0.4 12 ma gate threshold voltage v ds = 5v, i d = 30ma v gs (th) - 5 - 3.1 - 2 v forward transconductance v ds = 5v, i d = 7.0ma g m 5.0 7.7 - s dynamic characteristics input capacitance not applicable input internally matched c iss n/a n/a n/a pf output capacitance v ds = 50v, v gs = - 8v, f = 1mhz c oss - 22 - pf feedback capacitance v ds = 50v, v gs = - 8v, f = 1mhz c rss - 2.2 - pf
gan on sic hemt pulsed power transistor 250w peak, 1200 - 1400 mhz, 300s pulse, 10% duty magx - 001214 - 250l00 production v1 18 aug 11 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additional data sheets and product information. m/a - com technology solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 3 advanced: data sheets contain information regarding a product m/a - com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a - com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. electrical specifications: t c = 25 5c ( room ambient ) test fixture impedance parameter test conditions symbol min typ max units rf functional tests (v dd = 50v , i dq = 250ma , 300us / 10% duty, 1200 - 1400mhz) input power pout = 250w peak (25w avg) p in - 4.2 5.6 wpk power gain pout = 250w peak (25w avg) g p 16.5 17.7 - db drain efficiency pout = 250w peak (25w avg) d 50 57.9 - % load mismatch stability pout = 250w peak (25w avg) vswr - s 5:1 - - - load mismatch tolerance pout = 250w peak (25w avg) vswr - t 10:1 - - - f (mhz) z if ( ) z of ( ) 1200 3.6 - j5.3 3.5 + j0.7 1250 3.3 - j4.9 3.7 + j0.2 1300 3.2 - j4.4 3.5 - j0.3 1350 3.2 - j4.0 3.2 - j0.6 1400 3.2 - j3.6 2.7 - j0.7 i n p u t n e t w o r k z i f o u t p u t n e t w o r k z o f
gan on sic hemt pulsed power transistor 250w peak, 1200 - 1400 mhz, 300s pulse, 10% duty magx - 001214 - 250l00 production v1 18 aug 11 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additional data sheets and product information. m/a - com technology solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 4 advanced: data sheets contain information regarding a product m/a - com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a - com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. rf power transfer curve (output power vs. input power) rf power transfer curve (drain efficiency vs. output power) 50 100 150 200 250 300 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 pin (w) pout (w) 1200 mhz 1300 mhz 1400 mhz 35 40 45 50 55 60 65 70 100 125 150 175 200 225 250 275 300 pout (w) eff (%) 1200 mhz 1300 mhz 1400 mhz
gan on sic hemt pulsed power transistor 250w peak, 1200 - 1400 mhz, 300s pulse, 10% duty magx - 001214 - 250l00 production v1 18 aug 11 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additional data sheets and product information. m/a - com technology solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 5 advanced: data sheets contain information regarding a product m/a - com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a - com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. test fixture circuit dimensions test fixture assembly
gan on sic hemt pulsed power transistor 250w peak, 1200 - 1400 mhz, 300s pulse, 10% duty magx - 001214 - 250l00 production v1 18 aug 11 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additional data sheets and product information. m/a - com technology solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 6 advanced: data sheets contain information regarding a product m/a - com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a - com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. outline drawing turning the device on 1. set v gs to the pinch - off (v p ), typically - 5v 2. turn on v ds to nominal voltage (50v) 3. increase v gs until the i ds current is reached 4. apply rf power to desired level turning the device off 1. turn the rf power off 2. decrease v gs down to v p 3. decrease v ds down to 0v 4. turn off v gs correct device sequencing
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